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Random Access Memory: three choices. The three versions of
Subsystem B differ only in memory capacity. Subsystem B70 includes the 4KRA
memory module with 4096 words of read/write static memory. Power drain is so low
a standard “D” cell will provide back-up data retention. The 8KRA static
memory in Subsystem B70 offers twice the capacity, more address flexibility and
even lower power drain than the sum of two 4K memories. It features fully
buffered address and data lines, built-in noise immunity circuitry and our
exclusive KSET switch to provide card address offset in 1,024 byte increments. For more programming pleasure,
Subsystem B190’s 16KRA has 16,384 bytes of dynamic memory. This module is
available only in assembled form; fully burned-in and tested, it demonstrates
extraordinary reliability. Refresh is invisible, and access is fast, worst case
400 nsec. For all three memory modules, battery connector and recharge circuitry
are built-in. Savings with Subsystem B. The individual modules of Subsystem B can all be purchased separately, but Processor Technology offers a substantial price reduction on the complete package. One box contains all five boards plus complete assembly and operating instructions. Subsystem B is also available with the modules fully assembled and tested.
OPTIONS:
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When PCs Were Micros - Bits and pieces of history about the "good" old days
of microcomputers |
